power transistor arrays 1 publication date: march 2004 sjk00020aed parameter symbol rating unit collector-base voltage (emitter open) v cbo ? 60 v collector-emitter voltage (base open) v ceo ? 60 v emitter-base voltage (collector open) v ebo ? 6v collector current i c ? 3a peak collector current i cp ? 5a base current i b ? 1a collector power dissipation p c 15 w t a = 25 c 2.4 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = ? 30 ma, i b = 0 ? 60 v base-emitter saturation voltage v be v ce = ? 4 v, i c = ? 3 a ? 1.8 v collector-emitter cutoff current ( v be = 0 ) i ces v ce = ? 60 v, v be = 0 ? 200 a collector-emitter cutoff current (base open) i ceo v ce = ? 30 v, i b = 0 ? 300 a emitter-base cutoff current (collector open) i ebo v eb = ? 6 v, i c = 0 ? 1ma forward current transfer ratio h fe1 v ce = ? 4 v, i c = ? 1 a 70 250 ? h fe2 v ce = ? 4 v, i c = ? 3 a 10 collector-emitter saturation voltage v ce(sat) i c = ? 3 a, i b = ? 0.375 a ? 1.2 v transition frequency f t v ce = ? 10 v, i c = ? 0.5 a, f = 10 mhz 30 mhz turn-on time t on i c = ? 1 a 0.5 s storage time t stg i b1 = ? 0.1 a, i b2 = 0.1 a 1.2 s fall time t f v cc = ? 50 v 0.3 s pua3210 (PU3210) silicon pnp epitaxial planar type for power amplification complementary to pua3110 (pu3110) features ? low collector-emitter saturation voltage v ce(sat) ? satisfactory linearity of forward current transfer ratio h fe ? large collector current i c ? pnp 3 elements absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. note) the part number in the parenthesis shows conventional part number. internal connection 18 2 3 4 5 6 7 unit: mm 20.2 0.3 2.54 0.2 7 2.57 = 17.78 0.25 12345678 1.0 0.25 0.5 0.15 0.8 0.25 c 1.5 0.5 0.5 0.15 9.5 0.2 8.0 0.2 4.4 0.5 1.65 0.2 solder dip 5.3 0.5 4.0 0.2 1: emitter 2: base 3: collector 4: base 5: collector 6: base 7: collector 8: emitter sip8-a1 package maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://panasonic.net/sc/en
pua3210 2 sjk00020aed v ce(sat) i c h fe i c f t i c p c t a i c v ce i c v be c ob v cb safe operation area 0 160 80 120 40 0 20 16 12 4 8 ( 1 ) ( 2 ) ( 3 ) ( 4 ) ( 1 ) t c = t a ( 2 ) with a 50 50 2 mm al heat sink ( 3 ) with a 50 25 2 mm al heat sink ( 4 ) without heat sink collector power dissipation p c ( w ) ambient temperature t a ( c ) 0 ? 12 ? 10 ? 8 ? 2 ? 6 ? 4 0 ? 1 ? 2 ? 3 ? 4 ? 5 ? 6 t c = 25 c i b = ? 120 ma ? 10 ma ? 100 ma ? 40 ma ? 60 ma ? 80 ma ? 20 ma ? 5 ma ? 8 ma collector current i c ( a ) collector-emitter voltage v ce ( v ) v ce = ? 4 v 0 ? 2.0 ? 1.6 ? 0.4 ? 1.2 ? 0.8 0 ? 10 ? 8 ? 6 ? 4 ? 2 25 c ? 25 c t c = 100 c base-emitter voltage v be ( v ) collector current i c ( a ) ? 0.01 ? 0.1 ? 1 ? 10 ? 0.01 ? 100 i c / i b = 10 ? 0.1 ? 1 ? 10 ? 25 c t c = 100 c 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) ? 0.01 ? 0.1 ? 1 ? 10 1 10 4 v ce = ? 4 v 10 10 2 10 3 ? 25 c t c = 100 c 25 c forward current transfer ratio h fe collector current i c ( a ) ? 0.01 ? 0.1 ? 1 ? 10 1 10 4 v ce = ? 5 v t c = 25 c 10 10 2 10 3 transition frequency f t ( mhz ) collector current i c ( a ) ? 0.01 ? 0.1 ? 1 ? 10 1 10 4 10 10 2 10 3 i e = 0 f = 1 mhz t c = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb ( v ) ? 1 ? 10 ? 100 ? 1 000 ? 0.01 ? 0.1 ? 1 ? 10 ? 100 non repetitve pulse t c = 25 c ( per circuit ) t = 10 ms t = 1 ms i cp collector current i c ( a ) collector-emitter voltage v ce ( v )
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